Effect of Microstructure on Alternating Current-induced Damage in Cu Lines

• 영문명: Effect of Microstructure on Alternating Current-induced Damage in Cu Lines
• 발행기관: 한국마이크로전자및패키징학회
• 간행물 정보: 『마이크로전자 및 패키징학회지』제12권 제1호, 27~33쪽, 전체 7쪽
• 주제분류: 공학 > 산업공학
• 파일형태: PDF
• 발행일자: 2005.03.31

영문 초록

The effect of microstructure on alternating current-induced damage in 200 and 300 nm thick polycrystalline sputtered Cu lines on Si substrates has been investigated. Alternating currents were used to generate temperature cycles (with ranges from 100 to 300℃) and thermal strains (with ranges from 0.14 to 0.42%) in the Cu lines at a frequency of 10 kHz. Fatigue loading caused the development of severe surface roughness that was localized within individual grains which depends severely on grain orientations.

목차

1. Introduction

2. EXPERIMENTAL

3. Results

4. Discussions

5. Conclusion

Acknowledgement

References

키워드

Fatigue Alternating current Metal interconnect Thin film