Ge-Se 2성분계 박막매질의 ReRAM 적용을 위한 전기적 특성 평가

• 영문명: The Electric Properties Evaluation of Ge-Se Thin-Film Materials Application for ReRAM
• 발행기관: 한국산업기술융합학회(구. 산업기술교육훈련학회)
• 저자명: 송천섭(Chun-Seob Song)
• 간행물 정보: 『산업기술연구논문지』산업기술교육훈련논문지 제16권 4호, 105~109쪽, 전체 5쪽
• 주제분류: 공학 > 공학일반
• 파일형태: PDF
• 발행일자: 2011.12.30

영문 초록

In this study, we studied the nature of thin films formed by photodoping chalcogenide materials with for use in programmable metallization cell devices, a type of ReRAM. We investigated the nature of thin films formed by photo doping of Ag ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We were able to do 3 compositions of Ge-Se compositions for understanding of switching properties with Ge-Se complex-ratio. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.

목차

Ⅰ. 서 론

Ⅱ. 실 험

Ⅲ. 실험결과 및 고찰

Ⅳ. 결 론

키워드

ReRAM(저항성메모리) Chalcogenide(칼코잼화합) Solid-Electrolyte(고체전해질)