Silicon 기반 IC 디바이스에서의 층간 절연막 특성 분석 연구

• 영문명: Raman Spectroscopy Analysis of Inter Metallic Dielectric Characteristics in IC Device
• 발행기관: 한국마이크로전자및패키징학회
• 간행물 정보: 『마이크로전자 및 패키징학회지』제23권 제4호, 19~24쪽, 전체 6쪽
• 주제분류: 공학 > 산업공학
• 파일형태: PDF
• 발행일자: 2016.12.31

영문 초록

Along the few nano sizing dimensions of integrated circuit (IC) devices, acceptable interlayer material for design is inevitable. The interlayer which include dielectric, interconnect, barrier etc. needs to achieve not only electrical properties, but also mechanical properties for endure post manufacture process and prolonging life time. For developing intermetallic dielectric (IMD) the mechanical issues with post manufacturing processes were need to be solved. For analyzing specific structural problem and material properties Raman spectroscopy was performed for various researches in Si semiconductor based materials. As improve of the laser and charge-coupled device (CCD) technology the total effectiveness and reliability was enhanced. For thin film as IMD developed material could be analyzed by Raman spectroscopy, and diverse researches of developing method to analyze thin layer were comprehended. Also In-situ analysis of Raman spectroscopy is introduced for material forming research.

목차

1. 서론

2. Si 기판 내 국소 부위 라만 분석 방법

3. 요약 및 결론

References

키워드

IC device intermetallic material intermetallic dielectric Raman spectroscopy IMD thin film in-situ