Joule-heating Induced Crystallization (JIC) of Amorphous Silicon Films

• 발행기관: 한국마이크로전자및패키징학회
• 간행물 정보: 『마이크로전자 및 패키징학회지』제25권 제4호, 101~104쪽, 전체 4쪽
• 주제분류: 공학 > 산업공학
• 파일형태: PDF
• 발행일자: 2018.12.31

영문 초록

An electric field was applied to a Mo conductive layer in the sandwiched structure of $glass/SiO_2/Mo/SiO_2/a-Si$ 수식 이미지 to induce Joule heating in order to generate the intense heat needed to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced via Joule heating through a solid state transformation. Blanket crystallization was accomplished within the range of millisecond, thus demonstrating the possibility of a new crystallization route for amorphous silicon films. The grain size of JIC poly-Si can be varied from few tens of nanometers to the one having the larger grain size exceeding that of excimer laser crystallized (ELC) poly-Si according to transmission electron microscopy. We report here the blanket crystallization of amorphous silicon films using the $2^{nd}$ 수식 이미지 generation glass substrate.

목차

1. Introduction

2. Experimental

3. Results and Discussion

4. Summary

Acknowledgements

References

키워드

Crystallization Thin Film Transistor Poly-Si Joule-heating AMOLED