Growth of α-Ga2O3 Epitaxial Films on Al2O3 by Halide Vapor Pressure Epitaxy

• 발행기관: 한국마이크로전자및패키징학회
• 간행물 정보: 『마이크로전자 및 패키징학회지』제26권 제4호, 113~118쪽, 전체 6쪽
• 주제분류: 공학 > 산업공학
• 파일형태: PDF
• 발행일자: 2019.12.31

영문 초록

In this study, we investigated the growth of single-crystallinity α-Ga2O3 thin films on c-plane sapphire substrates using halide vapor pressure epitaxy. We also found the optimal growth conditions to suppress the phase transition of α-Ga2O3. Our results confirmed that the growth temperature and partial pressure of the reactive gas greatly influenced the crystallinity. The optimal growth temperature range was about 460~510℃, and the α-Ga2O3 thin films with the highest crystallinity were obtained at a III/VI ratio of 4. The thickness and surface morphology of the thin films was observed by scanning electron microscopy. The film thickness was 6.938 ㎛, and the full width at half maximum of the ω-2θ scan rocking curve was as small as 178 arcsec. The optical band gap energy obtained was 5.21 eV, and the films were almost completely transparent in the near-ultraviolet and visible regions. The etch pit density was found to be as low as about 6.0 × 104 cm-2.

목차

1. Introduction

2. Experimental

3. Results and Discussion

4. Conclusions

Acknowledgments

References

키워드

HVPE ${\alpha}-Ga_2O_3$ 수식 이미지 $Al_2O_3$ 수식 이미지 Heteroepitaxy Single crystal