실리콘의 펠티에 효과에 對한 硏究

• 영문명: A Study on the peltier effect of si-Semiconductor
• 발행기관: 호서대학교 사회과학연구소
• 저자명: 鄭英暢(Young Chang Jung)
• 간행물 정보: 『사회과학연구』제4집 제1호, 397~401쪽, 전체 5쪽
• 주제분류: 사회과학 > 행정학
• 파일형태: PDF
• 발행일자: 1985.12.31

영문 초록

Being that the melting point of silicon is 1800 J/gr, in this paper it is interested that Si-Semiconductors will be worth using of Peltier effect. For attachment of semiconductor chips, a cure schedule of 2 hours at 200°C has been found to yield a stable and reliable. In the results, it is a semi-permant element and using with a heating element the temperature is up to 200°C over. At the end, it will be possible to improve an excellent elements with a way.

목차

ABSTRACT

1. 序論

2. 基本原理

3. 素子의 製作

4. 實驗 및 檢討

5. 結論

參考文獻