MAS(A1-A1₂O₃-Si)構造의 Carrier 注入에 대한 Flat band 電壓 變化

• 영문명: The Variable Flat-band Voltage depend on injection carrier in MAS(A1-A1₂O₃-Si)structure
• 발행기관: 호서대학교 사회과학연구소
• 저자명: 朴成熙(Sung Hee Park)
• 간행물 정보: 『사회과학연구』제4집 제1호, 387~395쪽, 전체 9쪽
• 주제분류: 사회과학 > 행정학
• 파일형태: PDF
• 발행일자: 1985.12.31

영문 초록

We can find that the main causes of the defect in MOS devices depend on unstable charging phenomena of Si0₂-Si interface. The characteristics of MAS have more advantages than them of MOS in the flat band voltage change vs carrier injection time. If the advantages are applied, the time change rates of memory are able to be improved, and MAS devices are applicable to the stable capacitive circuit.

목차

ABSTRACT

1. 序論

2. 理論

3. 實驗 및 測定過程

4. 實驗結果 및 考察

5. 結論

參考文獻