The Effects of UBM and SnAgCu Solder on Drop Impact Reliability of Wafer Level Package

• 발행기관: 한국마이크로전자및패키징학회
• 간행물 정보: 『마이크로전자 및 패키징학회지』제17권 제3호, 65~69쪽, 전체 5쪽
• 주제분류: 공학 > 산업공학
• 파일형태: PDF
• 발행일자: 2010.09.30

영문 초록

In this study, we investigated the effects of UBM(Under Bump Metallization) and solder composition on the drop impact reliability of wafer level packaging. Fan-in type WLP chips were prepared with different solder ball composition (Sn3.0Ag0.5Cu, and Sn1.0Ag0.5Cu) and UBM (Cu 10 µm, Cu 5 µm＼Ni 3 µm). Drop test was performed up to 200 cycles with 1500G acceleration according to JESD22-B111. Cu\Ni UBM showed better drop performance than Cu UBM, which could be attributed to suppression of IMC formation by Ni diffusion barrier. SAC105 was slightly better than SAC305 in terms of MTTF. Drop failure occurred at board side for Cu UBM and chip side for Cu\Ni UBM, independent of solder composition. Corner and center chip position on the board were found to have the shortest drop lifetime due to stress waves generated from impact.

목차

1. Introduction

2. Experiments

3. Results and Discussion

4. Conclusions

Acknowledgements

References

키워드

Under Bump Metallization SnAgCu solder Wafer Level Package Drop Impact Reliability