유연 반도체/메모리 소자 기술

• 영문명: Technology of Flexible Semiconductor/Memory Device
• 발행기관: 한국마이크로전자및패키징학회
• 간행물 정보: 『마이크로전자 및 패키징학회지』제20권 제2호, 1~9쪽, 전체 9쪽
• 주제분류: 공학 > 산업공학
• 파일형태: PDF
• 발행일자: 2013.06.30

영문 초록

Recently flexible electronic devices have attracted a great deal of attention because of new application possibilities including flexible display, flexible memory, flexible solar cell and flexible sensor. In particular, development of flexible memory is essential to complete the flexible integrated systems such as flexible smart phone and wearable computer. Research of flexible memory has primarily focused on organic-based materials. However, organic flexible memory has still several disadvantages, including lower electrical performance and long-term reliability. Therefore, emerging research in flexible electronics seeks to develop flexible and stretchable technologies that offer the high performance of conventional wafer-based devices as well as superior flexibility. Development of flexible memory with inorganic silicon materials is based on the design principle that any material, in sufficiently thin form, is flexible and bendable since the bending strain is directly proportional to thickness. This article reviews progress in recent technologies for flexible memory and flexible electronics with inorganic silicon materials, including transfer printing technology, wavy or serpentine interconnection structure for reducing strain, and wafer thinning technology.

목차

1. 서론

2. 유연 실리콘 반도체/메모리 기술

3. 전사 기술을 이용한 유연 반도체/메모리

4. 웨이퍼 thinning을 이용한 유연 반도체/메모리

5. 결론

감사의 글

참고문헌

키워드

Flexible memory Flexible semiconductor Inorganic silicon memory Flexibility.