Double Exposure Laser Interference Lithography for Pattern Diversity using Ultraviolet Continuous-Wave Laser

• 발행기관: 한국마이크로전자및패키징학회
• 간행물 정보: 『마이크로전자 및 패키징학회지』제26권 제2호, 9~14쪽, 전체 6쪽
• 주제분류: 공학 > 산업공학
• 파일형태: PDF
• 발행일자: 2019.06.30

영문 초록

The newly discovered properties of periodic nanoscale patterns have increasingly sparked research interests in various fields. Along this direction, it is worth mentioning that there had been rare studies conducted on interference exposure, a method of creating periodic patterns. Additionally, these few studies seemed to validate the existence of only exact quadrangle shapes and dot patterns. This study asserted the formation of wavy patterns associated to using multiple exposures of the ratio of the first exposure intensity to the second exposure intensity. Such patterns were designed and constructed herein via overlapping of two Gaussian beams relative to certain rotation angles, and with a submicron structure fabricated based on a 360-nm continuous-wave laser. Results confirmed that the proposed double exposure laser interference lithography is able to create circular, elliptical and wavy patterns with no need for complex optical components.

목차

1. Introduction

2. Experimental and Simulation

3. Results and Discussion

4. Conclusion

Acknowledgment

References

키워드

Laser Interference Lithography Multiple Exposure Wave Pattern Regular Submicron Pattern Gaussian Beam