Effects of Asymmetric Distribution of Charged Defects on the Hysteresis Curves of Ferroelectric Capacitors

• 영문명: Effects of Asymmetric Distribution of Charged Defects on the Hysteresis Curves of Ferroelectric Capacitors
• 발행기관: 한국마이크로전자및패키징학회
• 간행물 정보: 『마이크로전자 및 패키징학회지』제12권 제3호, 219~226쪽, 전체 8쪽
• 주제분류: 공학 > 산업공학
• 파일형태: PDF
• 발행일자: 2005.09.30

영문 초록

When a ferroelectric film has an inhomogeneous distribution of charged defects, a voltage shift in the polarization curve is induced by the internal field generated in the film. The direction and the magnitude of voltage shift in the P-V hysteresis curves obtained by the Sawyer-Tower method are different from those obtained by the virtual ground method. In this study, the asymmetric behavior in the P-V hysteresis curves of inhomogeneous ferroelectric films was investigated with a physical model and the polarization curves obtained by the Sawyer-Tower and the virtual ground methods are compared.

목차

1. Introduction

2. Modeling of P-v Cure

3. Results and Discussion

4. Conclusion

Acknowledgement

References

키워드

ferroelectric modeling Sawyer-Tower virtual ground hysteresis curve