기판온도에 따른 수소화된 나노크리스탈 실리콘 박막의 구조적 광학적 특성 분석

• 영문명: A Study of Structural and Optical Features of Nc-Si:H Thin Films using Substrate Temperatures
• 발행기관: 한국산업기술융합학회(구. 산업기술교육훈련학회)
• 저자명: 권진업(Jin-Up Kwon)
• 간행물 정보: 『산업기술연구논문지』산업기술교육훈련논문지 제16권 1호, 149~154쪽, 전체 6쪽
• 주제분류: 공학 > 공학일반
• 파일형태: PDF
• 발행일자: 2011.03.30

영문 초록

In this study, nanostructural and optical features of the hydrogenated nanocrystalline silicon were investigated by substrate temperatures. Especially, nanostructure of the silicon was reacted sensitively by controlling the variables. Features of the thin film were changed by substrate temperatures. Nc-Si:H thin films were deposited by PECVD technique. Nanostructural and optical features of the thin films were measured by controlling of the substrate temperature during the deposition. The sample deposited under room temperature contained several nanocrystallites. As substrate temperature rises from room temperature to 600℃, crystallites size was increased from 1nm to 6nm and the crystalline volume fraction was increased. During the deposition, nucleation growth was accelerated by increasing the thermodynamic energy in the films. As a result, ~390nm thickness film at 200℃ substrate temperature showed ~420nm thickness at 600℃. This change had a effected on transmittance in the visible light region. And the band gap of the films were changed from 1.7eV at room temperature to 1.4eV at 600℃.

목차

Ⅰ. 서 론

Ⅱ. 실험 및 분석방법

Ⅲ. 실험결과 및 고찰

Ⅳ. 결 론

키워드

PECVD(화학기상증착) Nc-Si:H Substrate Temperatures(수소화된 나노결정실리콘) XRD(X선분석) UV-Vis(기판온도) Optical Bandgap(광학적 밴드갭)