알루미늄화합물을 이용한 고온 • 대전력용 SiC MIS 소자에 관한 연구

• 영문명: A s tudy on the SiC MIS devices for high temperature and high power applications using aluminum compound
• 발행기관: 호서대학교 공업기술연구소
• 저자명: 구경완(Kyung-Wan Koo)
• 간행물 정보: 『공업기술연구 논문집』제26권 제1호, 1~8쪽, 전체 8쪽
• 주제분류: 공학 > 공학일반
• 파일형태: PDF
• 발행일자: 2007.06.30

영문 초록

In this paper, we propose aluminum oxide (and nitride) thin nlm as gate insulating material instead of Si02 on 6H—Si し MIS devices. The fabrication of aluminium oxide (and nitride) films directly on 6H_SiC(0001) substrates by reactive magnetron sputtering method. Well-behaved C - V characteristics were obtained measured in MIS capacitors structures. The dielectric constant of aluminum nitride films was obtained as around 8.4. Also, the gate leakage current density of the MIS capacitor was 10 ^ A/cmᄂ order within the electric field of 2 MV/cm. The amount of Du was evaluated as about 5><1010 eV cm at a location of 0.5 eV from the midgap. These results indicate that the interface property of this structure is enough quality to MIS devices applications.

목차

i ■ 서 론

II- 실험 방법

in. 결과 및 고찰

IV. 결 론

키워드

silicon carbide aluminum nitride aluminum oxide interface trap density