고밀도 플라즈마에 의한 Y2O3박막의 식각 메커니즘 연구

• 영문명: Etch Mechanism of Y₂O₃ Thin Films in High Density Plasma
• 발행기관: 한국항해항만학회
• 저자명: 김영찬(Young-Chan Kim) 김창일(Chang-il Kim) 장의구(Eui-Goo Chang)
• 간행물 정보: 『한국항해항만학회 학술대회논문집』2000 추계학술대회논문집, 25~28쪽, 전체 4쪽
• 주제분류: 공학 > 해양공학
• 파일형태: PDF
• 발행일자: 2000.04.30

영문 초록

In this study, Y₂O₃ thin films were etched with inductively coupled plasma (ICP). The etch rate of Y₂O₃, and the selectivity of Y₂O₃ to YMnO₃ were investigated by varying Cl₂/(Cl₂+Ar) gas mixing ratio. The maximum etch rate of Y₂O₃, and the selectivity of Y₂O₃ to YMnO₃ were 302/min, and 2.4 at Cl₂/(Cl₂+Ar) gas mixing ratio of 0.2 repectively. In x-ray photoelectron spectroscopy (XPS) analysis, Y₂O₃ thin film was dominantly etched by Ar ion bombardment, and was assisted by chemical reaction of Cl radical. These results were confirmed by secondary ion mass spectroscopy(SIMS) analysis. YCI, and YCl₃ existed at 126.03 a.m.u, and 192.3 a.m.u, respectively

목차

1. 서론

2. 실험방법

3. 결과 및 고찰

4. 결론

키워드

FRAM Y₂O₃ ETCH MFIS ICP