유도 결합 플라즈마(Cl2/Ar)를 이용한 CeO2 박막의 식각 특성 연구

• 영문명: A Study on the Etching Characteristics of CeO₂ Thin Films using inductively coulped Cl₂/Ar Plasma
• 발행기관: 한국항해항만학회
• 저자명: 오창석(Chang-Seok Oh) 김창일(Chang-Il Kim) 권광호(Kwang-Ho Kwon)
• 간행물 정보: 『한국항해항만학회 학술대회논문집』2000 추계학술대회논문집, 29~32쪽, 전체 4쪽
• 주제분류: 공학 > 해양공학
• 파일형태: PDF
• 발행일자: 2000.04.30

영문 초록

Cerium oxide thin film has been proposed as a buffer layer between the ferroelectric film and the Si substrate in Metal-Ferroelectric-Insulator-Silicon (MFIS) structures for ferroelectric random access memory (FRAM) applications. In this study, CeO₂ thin films were etched with Cl₂/Ar gas combination in an inductively coupled plasma (ICP). The highest etch rate of CeO₂ film is 230 A/min at Cl₂/(Cl₂+Ar) gas mixing ratio of 0.2. This result confirms that CeO₂ thin film is dominantly etched by Ar ions bombardment and is assisted by chemical reaction of Cl radicals. The selectivity of CeO₂ to YMnO₃ was 1.83. As a XPS analysis, the surface of etched CeO₂ thin films was existed in Ce-Cl bond by chemical reaction between Ce and Cl. The results of XPS analysis were confirmed by SIMS analysis. The existence of Ce-Cl bonding was proven at 176.15 (a.m.u.).

목차

1. 서론

2. 실험 방법

3. 결과 및 토의

4. 결론

키워드

FRAM MFIS CeO₂ ICP Etch