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• 영문명: Nondestructive Measurement on Electrical Characteristics of Amorphous Silicon by Using the Laser Beam
• 발행기관: 한국항해항만학회
• 저자명: 박남천(Nam-Chun Park)
• 간행물 정보: 『한국항해항만학회 학술대회논문집』2000 추계학술대회논문집, 36~39쪽, 전체 4쪽
• 주제분류: 공학 > 해양공학
• 파일형태: PDF
• 발행일자: 2000.04.30

영문 초록

A small electrical potential difference which appears on any solid body when subjected to illumination by a modulated by a modulated light beam generated by laser is called photocharge voltage(PCV) [1,2]. This voltage is proportional to the induced change in the surface electrical charge and is capacitatively measured on various materials such as conductors, semiconductors, ceramics, dielectrics and biological objects. The amplitude of the detected signal depends on the type of material under investigation, and on the surface properties of the sample. In photocharge voltage spectroscopy measurements[3], the sample is illuminated by both a steady state monochromatic bias light and the pulsed laser. The monochromatic light is used to created a variation in the steady state population of trap levels in the surface and space charge region of semiconductor samples which does result in a change in the measured voltage. Using this technique the spatial variation of PCV can be utilized to evalulate the surrface conditions of the sample and the variation of the PCV due to the monochromatic bias light are utilized to charactrize the surface states. A qualitative analysis of the proposed measuremen is present along with experimental results performed on amorphous silicon samples. The deposition temperature was varied in order to obtain samples with different structural, optical and electronic properties and measurements are related to the defect density in amorphous thin film.

목차

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2. 이론

3. 실험 및 결과

4. 결론

키워드

amorphous silicon nondestructive measurement laser beam photocharge voltage surface state