MeV 이온주입에 의한 Retrograde Triple-well 형성시 발생하는 결함제어

• 영문명: Control of Defect Produced in a Retrograde Triple Well Using
• 발행기관: 한국항해항만학회
• 저자명: 정희석(Hee-Seok Jeong) 고무순(Moo-Soon Ko) 김대영(Dae-Young Kim) 류한권(Han-Gwon Ryu) 노재상(Jae-Sang Ro)
• 간행물 정보: 『한국항해항만학회 학술대회논문집』2000 추계학술대회논문집, 17~20쪽, 전체 4쪽
• 주제분류: 공학 > 해양공학
• 파일형태: PDF
• 발행일자: 2000.04.30

영문 초록

This study is about a retrograde triple well employed in the Cell tr. of next DRAM and flash memory. triple well structure is formed deep n-well under the light p-well using MeV ion implantation. MeV P implanted deep n-well was observed to show greatly improved characteristics of electrical isolation and soft error. Junction leakage current, however, showed a critical behavior as a function of implantation and annealing conditions. {311} defects were observed to be responsible for the leakage current. {311} defects were generated near the Rp (projected range) region and grown upward to the surface during annealing. This is study on the defect behavior in device region as a function of implantation and annealing conditions.

목차

1. 서론

2. 실험방법

3. 결과 및 고찰

4. 결론

키워드

Retograde Triple-well Ion-Implant Cell-Transister TRIM