Analytical Quantification and Effect of Microstructure Development in Thick Film Resistor Processing

• 발행기관: 한국마이크로전자및패키징학회
• 간행물 정보: 『마이크로전자 및 패키징학회지』제19권 제4호, 33~37쪽, 전체 5쪽
• 주제분류: 공학 > 산업공학
• 파일형태: PDF
• 발행일자: 2012.12.31

영문 초록

Microstructure developments of RuO₂ based thick film resistors during firing as a function of glass viscosity were analytically quantified and its effect on the electrical property was investigated. The microstructure development was retarded as the viscosity of glass was increased. It was found that the viscosity range for each stage of microstructure development are as follows ; 7500-10⁵ Pa·s for the glass sintering, 2000-7500 Pa·s for the glass island formation, 700-2000 Pa·s for the glass spreading, and 50-700 Pa·s for the infiltration. The sheet resistivity decreased as the viscosity of glass in the resistor film increased due to the higher chance of sintering for the conductive particles with the higher viscosity of the glass.

목차

1. Introduction

2. Experimental Procedure

3. Results and Discussion

4. Conclusions

Acknowledgment

References

키워드

Thick film resistor Viscosity Microstructure development Sheet resistivity