전자선 리소그래피 공정 최적화를 통한 100nm 이하 초미세 패턴을 포함하는 포토 마스크 제작

• 영문명: Fabrication of a Photomask Containing Ultra-Fine Patterns of less than 100 nm through the Process Optimization of Electron Beam Lithography
• 발행기관: 한국산업기술융합학회(구. 산업기술교육훈련학회)
• 저자명: 전상철(Sang-Chul Jeon)
• 간행물 정보: 『산업기술연구논문지』산업기술연구논문지 제25권 3호, 1~7쪽, 전체 7쪽
• 주제분류: 공학 > 공학일반
• 파일형태: PDF
• 발행일자: 2020.09.30

영문 초록

This study aims to develop an electronic beam lithography processing technique with the best pattern resolution among top-down machining methods and apply it to manufacture nanoscale structures. When electron beams enter a substrate with highly dense patterns, a pattern distortion occurs due to the electron beam proximity effect caused by the scattering of electron beams reaching the pattern region under the substrate. A silicon nanomold of line width 50 nm was produced and the pattern uniformity was satisfied within the tolerance range through a proper correction of the electron beam proximity effect. In addition, a photo mask with ultra-fine patterns of diameter less than 100 nm was manufactured for use in the semiconductor exposure process using the correction method of the electron beam proximity effect and innovative methods involving liftoff processes.

목차

Ⅰ. 서 론

Ⅱ. 실험

Ⅲ. 실험결과 및 고찰

Ⅳ. 결 론

참고문헌

키워드

전자선 리소그래피 근접효과 보정 산란 리프트 오프 노광 마스크 Electron Beam Lithography Proximity Effect Correction Scattering Lift off Photo Mask