A Study on the F a b ric a tio n of AIN T hin Films by CVD u s in g a lu m in u m a lk y l precursor

• 영문명: A Study on the F a b ric a tio n of AIN T hin Films by CVD u s in g a lu m in u m a lk y l precursor
• 발행기관: 호서대학교 공업기술연구소
• 저자명: Chang-Hwan Bae
• 간행물 정보: 『공업기술연구 논문집』제32권 제1호, 1~6쪽, 전체 6쪽
• 주제분류: 공학 > 공학일반
• 파일형태: PDF
• 발행일자: 2013.06.30

영문 초록

AIN films were prepared by CVD using aluminum alkyl ((CH3)3A1) precursor in an horizontal hot-wall type reactor. AIN films of different crystalline quality were obtained at TdeP=813-1023 K and P tot=1.99 kPa. A IN films of 2 um thickness can be grown highly oriented on amorphous quartz substrates. Thicker AIN films exhibit a polycrystalline nature. The AIN films of 0.1-0.2 pm thickness were transparent and their refractive indexes were about 1.5-1.9.

목차

I. INTRODUCTION

II. EXPERIMENTAL PROCEDURES

III. RESULTS AND DISCUSSION

IV. CONCLUSION

키워드

AIN Film Aluminum Alkyl Precursor CVD Poly crystalline