RTMOCVD법에 의해 제조된 Ta₂O₅ 박막의 특성

• 영문명: Characteristics of TA₂O₅ thin film prepared by RTMOCVD
• 발행기관: 강원대학교 산업기술연구소
• 저자명: 소명기(So Myoung Gi) D.L Kwong
• 간행물 정보: 『산업기술연구』vol.19, 1~5쪽, 전체 5쪽
• 주제분류: 공학 > 공학일반
• 파일형태: PDF
• 발행일자: 1999.09.30

영문 초록

Ultra thin Ta₂O₅ gate dielectrics were prepared by RTMOCVD (rapid thermal metal organic chemical vapor deposition) using Ta source TaC₁₂H₃₀O₅N and O₂ gaseous mixtures. As a result, Ta₂O₅ thin films showed significantly low leakage current compared to SiO₂ of identical thickness, which was due to the stabilization of the interfacial layer by NO (SiOxNy) passivation layer. The conduction of leakage current in Ta₂O₅ thin films was described by the hopping mechanism of Poole-Frenkel (PF) type.

목차

Abstract

1. 서론

2. 실험방법

3. 결과 및 고찰

4. 결론

참고문헌

키워드

RTMOCVD Ta₂O₅ thin films leakage current