금속 질화물 박막의 원자층 증착 및 반도체 분야 응용 연구 동향

• 영문명: Research Trends of Atomic Layer Deposition of Metal Nitrides and Their Applications in Semiconductor Industry
• 발행기관: 한국세라믹학회
• 저자명: 이자영(Jayeong Lee) 최보윤(Boyun Choi) 안준혁(Junhyeok Ahn) 전나리(Nari Jeon)
• 간행물 정보: 『세라미스트』제27권 제1호, 92~108쪽, 전체 17쪽
• 주제분류: 공학 > 화학공학
• 파일형태: PDF
• 발행일자: 2024.03.30

영문 초록

With the recent advances in nanotechnology and the semiconductor industry, the study of nitride thin films has become increasingly important in the fields of electronic devices, optical devices, and nanomaterials research. Various methods have been used to synthesize nitride thin films, among which ALD stands out as a deposition technique capable of yielding high-quality thin films at lower temperatures via sequential self-limiting surface treatments. As the need for high-quality thin film deposition at the nanoscale and highly conformal thin films has emerged, the deposition of metal nitride thin films by ALD has been actively researched, encompassing hafnium nitride, aluminum nitride, titanium nitride, zirconium nitride, and silicon nitride. In this review, we will discuss the current landscape of research pertaining to metal nitride thin films prepared by ALD.

목차

1. 서론

2. 금속 질화물 박막의 원자층 증착 및 연구동향

3. 결론

REFERENCES

키워드

Atomic layer deposition Metal nitrides Nitrides Plasma-enhanced atomic layer deposition Thin film