차세대 메모리 장치를 위한 강유전성 HfO₂의 잠재력: 강유전성 특성 및 응용

• 영문명: The Potential of ferroelectric HfO₂ for Next-Generation Memory Device: Ferroelectric Properties and Applications
• 발행기관: 한국세라믹학회
• 저자명: 송명섭 채승철
• 간행물 정보: 『세라미스트』제26권 제1호, 121~137쪽, 전체 17쪽
• 주제분류: 공학 > 화학공학
• 파일형태: PDF
• 발행일자: 2023.03.30

영문 초록

The discovery of the ferroelectricity of HfO₂ in 2011 has opened up new avenues for the application of ferroelectric technology. With the stability of ferroelectricity in a few nm scales, HfO₂ has become a valuable material for the development of next-generation electronic memory devices. The unique structure of HfO₂ gives rise to various ferroelectric properties and behaviors that can be utilized in different types of devices such as ferroelectric field effect transistors (FeFETs), negative capacitance field effect transistors (NCFETs), ferroelectric tunnel junctions (FTJs), and ferroelectric capacitors (FeCAPs). In this review, we explore the potential of HfO₂ for the high-density storage of data and low-energy consumption in next-generation devices. We demonstrate the operating principles and strengths of HfO₂ in various device applications, shedding light on how this material can help address the electronics industry's current challenges.

목차

1. 서론

2. 본론

3. 결론

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키워드

Ferroelectricity HfO₂ memory device negative capacitance neuromorphic device