The behavior of negative ions in silane plasma chemical vapor deposition

• 발행기관: 강원대학교 산업기술연구소
• 저자명: 김교선(Kyo Seon Kim)
• 간행물 정보: 『산업기술연구』vol.14, 63~75쪽, 전체 13쪽
• 주제분류: 공학 > 공학일반
• 파일형태: PDF
• 발행일자: 1994.09.30

영문 초록

The objective of this research is to analyze the phenomena of negative ion behavior in silane plasma chemical vapor deposition. Based on the plasma chemistry, the model equations for the formation and transport of negative ions were proposed and solved. The evolutions of gaseous species along the reactor were presented for several conditions of process variables such as reactor pressure, total gas flow rate, and electric field. based on the model results, it is found that : (1) The concentration profiles of positive ions show the sharp peaks at the center of plasma reactor. (2) Most of negative ions are located in bulk plasma region, because the negative ions are excluded from the sheath region by electrostatic repulsion.

목차

ABSTRACT

1. Introduction

2. Chemical Reactions for Negative Ions in PCVD of Silane

3. Governing Equations for Gas Species in Silane PCVD

4. Results and Discussion

5. Conclusions

References