UV 센서 응용을 위한 SiC MIS 소자에 관한 연구

• 영문명: A study on the SiC Mk> devices for U V sensor applications
• 발행기관: 호서대학교 공업기술연구소
• 저자명: 구경완(Kyung一Wan Koo) 정순원(Soon一Won Jung)
• 간행물 정보: 『공업기술연구 논문집』제25권 제1호, 191~198쪽, 전체 8쪽
• 주제분류: 공학 > 공학일반
• 파일형태: PDF
• 발행일자: 2006.06.30

영문 초록

In this paper, we propose aluminum nitride(AlN) thin film as gate insulating material instead of SiC )2 on 6H~SiC MIS devices. For quite a low lattice misfit with SiC, AIN is as attractive as new gate insulating material in SiC devices. The fabrication of aluminium nitride (AIN) films directly on 6 H-S 1 ᄂ(0001) substrates by reactive magnetron sputtering method has been performed with rapid thermal annealing at a temperature range 01 ZOO 1000 °C in nitrogen ambient for enhancement of crystallization of films. The structural properties of AIN films on 6H-SiC(0001) by RTA analysed by XRD(X-Ray diffraction). The A1N(0002) peaks was clearly found. The dielectric constant of deposited films was obtained as around 8.4 from the accumulation region of capacitance-voltage curve. It is almost the same value with the bulk AIN. Also, the gate leakage current density of the MIS capacitor was 10 9 A/cm2 order within the electric field of 2 MV/cm. The amount of Djt was evaluated as about 5X1010 eV_1cm at a location of 0.5 eV from the midgap.

목차

I ■ 서 론

n. 실험 방법

m . 결고ᅡ 및 고찰

IV. 결 론

키워드

silicon carbide aluminum nitride reactive RF magnetron sputtering dielectric constant Du