디스플레이 및 일시 기능 소자에 적용된 산화물 기반 박막 트랜지스터

• 발행기관: 한국세라믹학회
• 저자명: 남궁석 송민규 권장연
• 간행물 정보: 『세라미스트』제21권 제1호, 44~54쪽, 전체 11쪽
• 주제분류: 공학 > 화학공학
• 파일형태: PDF
• 발행일자: 2018.03.30

영문 초록

Oxide semiconductor has been spotlighted as a channel material of TFTs in AMLCD as an alternative to Si, due to high mobility ( > 5cm 2 /Vs). It is also one of the strong candidates for TFTs in AMOLED because of high bias stability at amorphous phase. Beyond the advantages mentioned above, oxide semiconductor has many strengths such as transparency, low fabrication temperature and relatively low fabrication cost. For those reasons, the application of oxide semiconductor is not limited to display but can be extended to new types of electronics, for example, transient electronics for human implantable devices. From this context, oxide materials that have been used as semiconductor and insulator at transient electronics are investigated respectively, and conductor and substrate candidates are also explained, since transient electronics require systematic consideration beyond individual oxide films.

목차

1. 서론

2. 본론

3. 결론

참고문헌

키워드

Oxide semiconductor Thin film transistor Transient device