단일 펨토초 레이저펄스를 이용한 실리콘 표면에서의 시분해 반사율 측정 연구

• 영문명: Time-resolved transient reflective image on silicon surface after single-shot fs-laser pulse irradiation
• 발행기관: 한국레이저가공학회
• 저자명: 문혜영(Heh-Young Moon) 시두 메라 씽(Mehra Singh Sidhu) 이현규(Hyun-Kyu Lee) 정세채(Sae-Chae Jeoung)
• 간행물 정보: 『한국레이저가공학회지』한국레이저가공학회지 제14권 제4호, 21~27쪽, 전체 7쪽
• 주제분류: 공학 > 기계공학
• 파일형태: PDF
• 발행일자: 2011.12.31

영문 초록

In this work, we have studied on time-resolved transient reflective image of single crystalline Si surface after single-shot fs-laser irradiation with varying the laser fluence under two different laser spot sizes. The temporal profiles of transient reflectivity changes as well as its maximum values at the early delay time were found to be strongly dependent on both the laser beam spot size and laser fluence. We have interpreted the dependence of transient reflectivity changes on the laser spot size in terms of a relaxation of the generated free carriers to the bulk silicon, which should be interacted with the plasma.

목차

Abstract

1. 서 론

2. 실험방법

3. 결과 및 고찰

4. 결 론

참고문헌

키워드

과도반사율 펨토초 펌프-프루브 시분해 현미경 레이저 어블레이션 실리콘 transient reflectivity femtosecond pump-probe time-resolved microscopy laser ablation silicon