Photoreflectance 측정에 의한 InxGal-xP의 특성 연구

• 영문명: A Study of Characteristics of InxGal-xP by Photoreflectance measurement
• 발행기관: 한국레이저가공학회
• 저자명: 김동렬(D. L. Kim) 유재인(J. I. Yu)
• 간행물 정보: 『한국레이저가공학회지』한국레이저가공학회지 제8권 제3호, 5~10쪽, 전체 6쪽
• 주제분류: 공학 > 기계공학
• 파일형태: PDF
• 발행일자: 2005.12.01

영문 초록

  InxGa<SUB>1-X</SUB>P/GaAs structures were grown by chemical beam epitaxy(CBE). Pure phosphine (PH₃) gases were used as group V sources. For the group Ⅲ sources, TEGa, TmIn were used. InxGa<SUB>1-X</SUB>P epilayer was grown on SI­GaAs substrate and has a 1­㎛ thick. We have investigated the characteristics of InxGa<SUB>1-X</SUB>P by the photoreflectance(PR) spectroscopy. The PR spectrum of InxGa<SUB>1-X</SUB>P shows third derivative feature whose peaks provide energy gap. The energy gap of InxGa<SUB>1-X</SUB>P has deduced composition x. From temperature dependance of PR spectra, temperature coefficient is dEg/dT=-3.773×10？⁴ eV/K, and Varshni coefficients a and β values obtained 4×10？⁴ eV/K and 267 K respectively. Also, interaction αB was 19.4 meV using the Bose­Einstein temperature relation, and Θ value related the average phonon frequency were 101.4 K. In particular, shoulder peak related to defects observed in PR signal that measured in temperature 82 K.

목차

Abstract
1. 서론
2. 이론
3. 실험
4. 실험결과 및 논의
5. 결론
참고문헌

키워드

Electromodulation InxGa< SUB> 1­X< /SUB> P Chemical Beam Epitaxy(CBE) Photoreflectance(PR) Varshni coefficient